© Semiconductor Components Industries, LLC, 2008

August, 2008 − Rev. 7

1

Publication Order Number:

MBRF20200CT/D

MBRF20200CT

Preferred Device

SWITCHMODEt

Schottky Power Rectifier

The SWITCHMODE Power Rectifier employs the Schottky Barrier

principle in a large area metal−to−silicon power diode.

State−of−the−artgeometry features epitaxial construction with oxide

passivation and metal overlay contact. Ideally suited for use as

rectifiers in very low−voltage, high−frequency switching power

supplies, free wheeling diodes and polarity protection diodes.

Features

Mechanical Characteristics:

Leads are Readily Solderable

260

°C Max. for 10 Seconds

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Device

Package

Shipping

ORDERING INFORMATION

MBRF20200CT

TO−220

50 Units/Rail

SCHOTTKY BARRIER

RECTIFIER

20 AMPERES, 200 VOLTS

Preferred devices are recommended choices for future use

and best overall value.

http://onsemi.com

MBRF20200CTG

TO−220

(Pb−Free)

50 Units/Rail

2

1

3

ISOLATED TO−220

CASE 221D

STYLE 3

3

1

2

MARKING DIAGRAM

AYWW

B20200G

A K A

A

= Assembly Location

Y

= Year

WW

= Work Week

B20200 = Device Code

G

= Pb−Free Package

AKA

= Polarity Designator