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MMPQ2369 Datasheet(PDF) 2 Page - ON Semiconductor |
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MMPQ2369 Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 4 page ![]() MMPQ2369 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain(1) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 2.0 Vdc) hFE 40 20 — — — — — Collector−Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VCE(sat) — — 0.25 Vdc Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) VBE(sat) — — 0.9 Vdc DYNAMIC CHARACTERISTICS Current−Gain — Bandwidth Product (IC = 10 mAdc, VCE = 10 Vdc, f = 100 MHz) fT 450 550 — MHz Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cob — 2.5 4.0 pF Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cib — 3.0 5.0 pF SWITCHING CHARACTERISTICS Turn−On Time (VCC = 3.0 Vdc, VEB(off) = 1.5 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc) ton — 9.0 — ns Turn−Off Time (VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = 3.0 mAdc, IB2 = 1.5 mAdc) toff — 15 — ns 1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%. |
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