0.195 (4.95)

0.040 (1.02)

NOM

0.100 (2.54)

NOM

0.050 (1.25)

0.800 (20.3)

MIN

0.305 (7.75)

0.240 (6.10)

0.215 (5.45)

0.020 (0.51)

SQ. (2X)

REFERENCE

SURFACE

CATHODE

1. Derate power dissipation linearly 2.67

mW/°C above 25°C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are

recommended as cleaning agents.

from housing.

1 of 2

100021B

PACKAGE DIMENSIONS

FEATURES

•

!= 880 nm

• Chip material = AlGaAs

• Package type: T-1 3/4 (5mm lens diameter)

• Matched Photosensor: QSD122/123/124

• Narrow Emission Angle, 18°

• High Output Power

• Package material and color: Clear, peach tinted, plastic

Parameter

Symbol

Rating

Unit

Operating Temperature

-40 to +100

°C

Storage Temperature

-40 to +100

°C

240 for 5 sec

°C

260 for 10 sec

°C

Continuous Forward Current

50

mA

Reverse Voltage

5V

200

mW

NOTES:

1. Dimensions for all drawings are in inches (mm).

2. Tolerance of ± .010 (.25) on all non-nominal dimensions

unless otherwise specified.

ANODE

CATHODE

SCHEMATIC

QED121/122/123

PLASTIC INFRARED LIGHT EMITTING DIODE

PARAMETER

TEST CONDITIONS

SYMBOL

MIN

TYP

MAX

UNITS

Peak Emission Wavelength

!

PE

—

880

—

nm

Emission Angle

"

—

±9

—

Deg.

Forward Voltage

——

1.7

V

Reverse Current

——

10

µA

Radiant Intensity QED121

20

—

40

mW/sr

Radiant Intensity QED122

50

—

100

mW/sr

Radiant Intensity QED123

80

——

mW/sr

Rise Time

—

800

—

ns

Fall Time

—

800

—

ns