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BYV36C Datasheet(PDF) 1 Page - Gulf Semiconductor |
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BYV36C Datasheet(HTML) 1 Page - Gulf Semiconductor |
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1 / 2 page ![]() BYV36C SINTERED GLASS JUNCTION FAST AVALANCHE RECTIFIER VOLTAGE: 600V CURRENT: 1.6A FEATURE SOD-57 Glass passivated High maximum operating temperature Low leakage current Excellent stability Guaranteed avalanche energy absorption capability MECHANICAL DATA Case: SOD-57 sintered glass case Terminal: Plated axial leads solderable per MIL-STD 202E, method 208C Polarity: color band denotes cathode end Mounting position: any Dimensions in millimeters MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half-wave, 60HZ, resistive or inductive load rating at 25 °C, unless otherwise stated) SYMBOL BYV36C units Maximum Recurrent Peak Reverse Voltage VRRM 600 V Maximum RMS Voltage VRMS 420 V Maximum DC blocking Voltage VDC 600 V Reverse Breakdown Voltage at IR =0. 1mA V(BR)R 700min V Maximum Average Forward Rectified Current at Ttp=60 °C, lead length=10mm IF(AV) 1.6 A Peak Forward Surge Current at t=10ms half sinewave IFSM 30 A Maximum Forward Voltage at rated Forward Current and 25 °C IF = 1.0A VF 1.35 V Maximum DC Reverse Current Tj = 25 °C at rated DC blocking voltage Tj = 165 °C IR 5.0 150 µA µA Maximum Reverse Recovery Time (Note 1) Trr 100 nS Non Repetitive Reverse Avalanche Energy at L=120Mh ER 10 mJ Typical Diode Capacitance at f=1MHz,VR=0V Cd 45 pF Typical Thermal Resistance (Note 2) Rth(ja) 100 K/W Storage and Operating Junction Temperature Tstg, Tj -65 to +175 ℃ Note: 1. Reverse Recovery Condition IF = 0.5A, IR = 1.0A, IRR = 0.25A 2. Device mounted on an epoxy-glass printed-circuit boars, 1.5mm thick; thichness of Cu-layer≥40μm Rev.A1 www.gulfsemi.com |
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