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EM7G Datasheet(PDF) 1 Page - Gulf Semiconductor |
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EM7G Datasheet(HTML) 1 Page - Gulf Semiconductor |
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1 / 2 page ![]() Rev.A1 www.gulfsemi.com EM7G ULTRAFAST EFFICIENT PLASTIC SILICON RECTIFIER VOLTAGE: : : : 1000V CURRENT: : : : 1.0A FEATURE R-1 Low power loss High surge capability Glass passivated chip junction Ultra-fast recovery time for high efficiency High temperature soldering guaranteed 250℃/10sec/0.375″lead length at 5 lbs tension MECHANICAL DATA Terminal:Plated axial leads solderable per MIL-STD 202E, method 208C Case:Molded with UL-94 Class V-0 recognized Flame Retardant Epoxy Polarity:color band denotes cathode Mounting position:any Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (single-phase, half -wave, 60HZ, resistive or inductive load rating at 25℃, unless otherwise stated) SYMBOL EM7G units Maximum Recurrent Peak Reverse Voltage Vrrm 1000 V Maximum RMS Voltage Vrms 700 V Maximum DC blocking Voltage Vdc 1000 V Maximum Average Forward Rectified Current 3/8″lead length at Ta =55℃ If(av) 1.0 A Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load Ifsm 30.0 A Maximum Forward Voltage at Forward current 1A Peak Vf 1.7 V Maximum DC Reverse Current Ta =25℃ at rated DC blocking voltage Ta =125℃ Ir 10.0 100.0 μA μA Maximum Reverse Recovery Time (Note 1) Trr 75 nS Typical Junction Capacitance (Note 2) Cj 17.0 pF Typical Thermal Resistance (Note 3) R(ja) 60.0 ℃/W Storage and Operating Junction Temperature Tstg,Tj -55 to +150 ℃ Note: 1. Reverse Recovery Condition If =0.5A, Ir =1.0A, Irr =0.25A 2. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc 3. Thermal Resistance from Junction to Ambient at 3/8″lead length, P.C. Board Mounted |
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