CSD16340Q3 datasheet(2/9 Pages) TI

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CSD16340Q3

SLPS247A – DECEMBER 2009 – REVISED JANUARY 2010

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ELECTRICAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

Static Characteristics

BVDSS

Drain to Source Voltage

VGS = 0V, IDS = 250μA

IDSS

Drain to Source Leakage Current

VGS = 0V, VDS = 20V

μA

IGSS

Gate to Source Leakage Current

VDS = 0V, VGS = +10/-8V

100

VGS(th)

Gate to Source Threshold Voltage

VDS = VGS, IDS = 250μA

0.6

0.85

1.1

VGS = 2.5V, IDS = 20A

6.1

7.8

Ω

RDS(on)

Drain to Source On Resistance

VGS = 4.5V, IDS = 20A

4.3

5.5

Ω

VGS = 8V, IDS = 20A

3.8

4.5

Ω

gfs

Transconductance

VDS = 15V, IDS = 20A

121

Dynamic Characteristics

CISS

Input Capacitance

1050

1350

COSS

Output Capacitance

VGS = 0V, VDS = 12.5V, f = 1MHz

730

950

CRSS

Reverse Transfer Capacitance

Series Gate Resistance

1.5

Ω

Gate Charge Total (4.5V)

6.5

9.2

Qgd

Gate Charge Gate to Drain

1.2

VDS = 12.5V, ID = 20A

Qgs

Gate Charge Gate to Source

2.1

Qg(th)

Gate Charge at Vth

QOSS

Output Charge

VDS = 13V, VGS = 0V

td(on)

Turn On Delay Time

4.8

Rise Time

16.1

VDS = 12.5V, VGS = 4.5V ID = 20A

RG = 2Ω

td(off)

Turn Off Delay Time

13.8

Fall Time

5.2

Diode Characteristics

VSD

Diode Forward Voltage

IS = 20A, VGS = 0V

0.8

Qrr

Reverse Recovery Charge

14.5

VDD = 13V, IF = 20A, di/dt = 300A/μs

trr

Reverse Recovery Time

THERMAL CHARACTERISTICS

(TA = 25°C unless otherwise stated)

PARAMETER

MIN

TYP

MAX

UNIT

R θJC

Thermal Resistance Junction to Case(1)

2.7

°C/W

R θJA

Thermal Resistance Junction to Ambient(1) (2)

°C/W

(1)

RθJC is determined with the device mounted on a 1 inch square 2 oz. Cu pad on a 1.5 × 1.5 in 0.06 inch thick FR4 board. RθJC is

specified by design while RθJA is determined by the user’s board design.

(2)

Device mounted on FR4 Material with 1 inch2 of 2 oz. Cu.

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