NDF02N60Z, NDP02N60Z, NDD02N60Z

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2

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

NDP02N60Z

NDF02N60Z

NDD02N60Z

1.7

5.2

2.2

°C/W

Junction−to−Ambient Steady State

(Note 3) NDP02N60Z

(Note 3) NDF02N60Z

(Note 4) NDD02N60Z

(Note 3) NDD02N60Z−1

51

51

41

80

3. Insertion mounted

4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).

Characteristic

Test Conditions

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

600

V

Breakdown Voltage Temperature

Coefficient

Reference to 25°C,

0.6

V/°C

Drain−to−Source Leakage Current

25°C

1

mA

150°C

50

Gate−to−Source Forward Leakage

±10

mA

ON CHARACTERISTICS (Note 5)

Static Drain−to−Source

On−Resistance

4.0

4.8

W

Gate Threshold Voltage

3.0

4.5

V

Forward Transconductance

1.7

S

DYNAMIC CHARACTERISTICS

Input Capacitance

f = 1.0 MHz

274

pF

Output Capacitance

34

Reverse Transfer Capacitance

7.0

Total Gate Charge

10.1

nC

Gate−to−Source Charge

2.4

Gate−to−Drain (“Miller”) Charge

5.3

Plateau Voltage

6.4

V

Gate Resistance

4.9

W

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

9.0

ns

Rise Time

7.0

Turn−Off Delay Time

15

Fall Time

7.0

Diode Forward Voltage

1.6

V

Reverse Recovery Time

240

ns

Reverse Recovery Charge

0.7

mC

5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.