NDF03N60Z, NDP03N60Z, NDD03N60Z

http://onsemi.com

2

THERMAL RESISTANCE

Parameter

Symbol

Value

Unit

Junction−to−Case (Drain)

NDP03N60Z

NDF03N60Z

NDD03N60Z

1.6

5.0

2.0

°C/W

Junction−to−Ambient Steady State

(Note 3) NDP03N60Z

(Note 3) NDF03N60Z

(Note 4) NDD03N60Z

(Note 3) NDD03N60Z−1

51

51

40

80

3. Insertion mounted

4. Surface mounted on FR4 board using 1″ sq. pad size, (Cu area = 1.127 in sq [2 oz] including traces).

Characteristic

Test Conditions

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

600

V

Breakdown Voltage Temperature

Coefficient

Reference to 25°C,

0.6

V/°C

Drain−to−Source Leakage Current

25°C

1

mA

150°C

50

Gate−to−Source Forward Leakage

±10

mA

ON CHARACTERISTICS (Note 5)

Static Drain−to−Source

On−Resistance

3.3

3.6

W

Gate Threshold Voltage

3.0

4.5

V

Forward Transconductance

2.0

S

DYNAMIC CHARACTERISTICS

Input Capacitance

f = 1.0 MHz

312

pF

Output Capacitance

39

Reverse Transfer Capacitance

8

Total Gate Charge

12

nC

Gate−to−Source Charge

2.5

Gate−to−Drain (“Miller”) Charge

6.1

Gate Resistance

6.0

W

RESISTIVE SWITCHING CHARACTERISTICS

Turn−On Delay Time

9

ns

Rise Time

8

Turn−Off Delay Time

16

Fall Time

10

Diode Forward Voltage

1.6

V

Reverse Recovery Time

265

ns

Reverse Recovery Charge

0.9

mC

5. Pulse Width ≤ 380 ms, Duty Cycle ≤ 2%.