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MMST4401 Datasheet(PDF) 1 Page - Micro Commercial Components |
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MMST4401 Datasheet(HTML) 1 Page - Micro Commercial Components |
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1 / 2 page  MMST4401 NPN Small Signal Transistors Features • Power dissipation: 200mW (Tamb=25 ) • Collector current: 0.6A • Marking : K3X • Operating and Storage junction temperature range -55 to + 150 Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units OFF CHARACTERISTICS (2) V(BR)CEO Collector-Emitter Breakdown Voltage (IC=1.0mAdc, IB=0) 40 --- Vdc V(BR)CBO Collector-Base Breakdown Voltage (IC=100uAdc, IE=0) 60 --- Vdc V(BR)EBO Collector-Emitter Breakdown Voltage (IE=100uAdc, IC=0) 6.0 --- Vdc ICBO Collector Cutoff Current (VCB=35Vdc, IE=0Vdc) --- 0.1 µAdc ICEO Collector Cutoff Current (VCE=35Vdc, IB=0Vdc) --- 0.1 µAdc IEBO Emitter Cutoff Current (VEB=5Vdc, IC=0Vdc) --- 0.1 µAdc hFE DC Current Gain (IC=150mAdc, VCE=1.0Vdc) (IC=500mAdc, VCE=2.0Vdc) 100 40 300 --- --- --- VCE(sat) Collector-Emitter Saturation Voltage (IC=150mAdc, IB=15mAdc) --- 0.4 Vdc VBE(sat) Base-Emitter Saturation Voltage (IC=150mAdc, IB=15mAdc) --- 0.95 Vdc fT Current Gain-Bandwidth Product (VCE=10Vdc, IC=20mAdc, f=100MHz) 250 --- MHz Cob Output Capacitance (VCB=10Vdc, f=1.0MHz, IE=0) --- 6.5 pF td Delay Time tr Rise Time VCC=30V,IC=150uA, VBE(off)=2V,IB1=15mA --- --- 15 20 ns ns ts Storage Time tf Fall Time VCC=30V, IC=150mA, IB1=IB2=15mA --- --- 225 30 ns ns omponents 20736 Marilla Street Chatsworth !"# $% !"# MCC Revision: 3 2008/01/01 SOT-323 Suggested Solder Pad Layout INCHES MM DIM MIN MAX MIN MAX NOTE A .071 .087 1.80 2.20 B .045 .053 1.15 1.35 C .079 .087 2.00 2.20 D .026 Nominal 0.65Nominal E .047 .055 1.20 1.40 F .012 .016 .30 .40 G .000 .004 .000 .100 H .035 .039 .90 1.00 J .004 .010 .100 .250 K .012 .016 .30 .40 A C B D E F G H J 1.90 0.70 0.90 0.65 0.65 DIMENSIONS K TM Micro Commercial Components E B C www.mccsemi.com 1 of 2 Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 and MSL Rating 1 |
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