BCV65 datasheet(5/11 Pages) NXP

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BCV65

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Product data sheet

Rev. 4 — 27 July 2010

5 of 11

NXP Semiconductors

BCV65

NPN/PNP general-purpose transistor

VCE = −5V

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

VCE = −5V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

Fig 5.

TR2 (PNP): DC current gain as a function of

collector current; typical values

Fig 6.

TR2 (PNP): Base-emitter voltage as a function

of collector current; typical values

IC/IB =20

(1) Tamb = 150 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

IC/IB =20

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 150 °C

Fig 7.

TR2 (PNP): Collector-emitter saturation

voltage as a function of collector current;

typical values

Fig 8.

TR2 (PNP): Base-emitter saturation voltage as

a function of collector current; typical values

mgt715

400

600

800

1000

hFE

200

−10−2

−10−1

−1

−10

−102

−103

IC (mA)

(1)

(2)

(3)

mgt716

−1200

−1000

−800

−600

−400

−200

−10−2

−10−1

−1

−10

−102

−103

IC (mA)

VBE

(mV)

(1)

(2)

(3)

mgt717

−104

−103

−102

−10

−10−1

−1

−10

−102

−103

IC (mA)

VCEsat

(mV)

(1)

(2)

(3)

mgt718

−10−1

−1

−10

−102

−103

IC (mA)

−1200

−1000

−800

−600

−400

−200

VBEsat

(mV)

(1)

(2)

(3)

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