1. ANODE

2. NC

3. CATHODE

3

2

-

T

O

S3

2

-

T

O

S

3

2

-

T

O

S

3

2

-

T

O

S3

2

-

T

O

S

(1)

(3)

(2)

(UNITS: mm)

RECTRON USA

1315 John Reed Court, Industry, CA 91745

Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com

SEMICONDUCTOR

TECHNICAL SPECIFICATION

SD4150

RECTRON

SURFACE MOUNT 1N4150 DIODE

Absolute Maximum Ratings (Ta=25

°C)

ITEMS

SYMBOL

RATINGS

UNIT

Reverse

Voltage

VR

50

V

Reverse

Recovery Time

trr

6

ns

ForwardVoltage

@ If = 50 mA

VF

0.86

V

ForwardCurrent

IF

300

mA

Junction Temp.

Tj

-55 to 150

°C

Storage Temp.

Tstg

-55 to 150

°C

Mechanical Data

ITEMS

MATERIALS

Package

SOT-23

Lead Frame

42 Alloy

Lead Finish

Solder Plating

Bond Wire

Au

Mold Resin

Epoxy

Chip

Silicon

Electrical Characteristics (Ta=25

°C)

RATINGS

SYMBOL

RATINGS

UNIT

Reverse Voltage IR= 100uA

VR

50

V

Repetitive Peak Reverse Voltage

VRRM

75

V

Repetitive Peak Forward Current

IFRM

600

mA

Forward Voltage

IF= 1mA

IF= 10mA

IF= 50mA

IF= 100mA

IF= 200mA

VF

0.62

0.74

0.86

0.92

1.00

V

Reverse Current

VR= 50V

VR= 50V (Tj= 150

°C)

IR

0.10

100

uA

Junction Capacitance

VR = 0 V, f = 1MHz

Cj

2.5

pF