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Preliminary
4-14
RF2045
Rev A5 010110
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Current
120
mA
Input RF Power
+20
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, ICC=65mA
Frequency Range
DC to 6000
MHz
3dB Bandwidth
6
GHz
Gain
13.8
dB
Freq= 100MHz
13.7
dB
Freq= 1000MHz
11
13.6
dB
Freq=2000MHz
13.4
dB
Freq= 3000MHz
13
Freq= 4000MHz
Gain Flatness
±0.2
dB
100MHz to 2000MHz
Noise Figure
5.0
dB
Freq= 1000MHz
Input VSWR
1.7:1
In a 50
Ω system, DC to 4000MHz
Output VSWR
1.7:1
In a 50
Ω system, DC to 4000MHz
Output IP3
+33
dBm
Freq=1000MHz±50kHz, PTONE=-10dBm
Output P1dB
+17.8
dBm
Freq=1000MHz
Reverse Isolation
18.4
dB
Freq=2000MHz
Thermal
ICC=65mA, PDISS=310mW
ThetaJC
173
°C/W
Maximum junction temperature
142
°C
Mean Time Between Failures
1.5x103
years
TAMB=+85°C
Mean Time Between Failures
3.7x105
years
TAMB=+25°C
Mean Time Between Failures
2.0x109
years
TAMB=-40°C
Power Supply
With 22
Ω bias resistor
Device Operating Voltage
4.6
5.0
5.6
V
At pin 3 with ICC=65mA
Operating Current
65
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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