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Preliminary
4-26
RF2047
Rev A4 010110
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Current
75
mA
Input RF Power
+15
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-60 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 °C, VD=3.6V, ICC=40mA
Frequency Range
DC to 6000
MHz
3dB Bandwidth
>6
GHz
Gain
16.3
dB
Freq= 100MHz
16.0
dB
Freq= 1000MHz
14.0
15.3
dB
Freq=2000MHz
15.0
dB
Freq= 3000MHz
14.8
dB
Freq= 4000MHz
14.0
dB
Freq= 6000MHz
Gain Flatness
±0.5
dB
100MHz to 2000MHz
Noise Figure
4.2
dB
Freq= 2000MHz
Input VSWR
1.8:1
In a 50
Ω system, DC to 3000MHz
1.6:1
In a 50
Ω system, 3000MHz to 6000MHz
Output VSWR
1.7:1
In a 50
Ω system, DC to 3000MHz
2.2:1
In a 50
Ω system, 3000MHz to 6000MHz
Output IP3
+26
dBm
Freq=2000MHz±50kHz, PTONE=-10dBm
Output P1dB
+11.9
dBm
Freq=2000MHz
Reverse Isolation
19.4
dB
Freq=2000MHz
Thermal
ICC=40mA, PDISS=135mW
ThetaJC
196
°C/W
Maximum junction temperature
112
°C
Mean Time Between Failures
1.5x104
years
TAMB=+85°C
Mean Time Between Failures
9.3x106
years
TAMB=+25°C
Mean Time Between Failures
2.9x1011
years
TAMB=-40°C
Power Supply
With 22
Ω bias resistor
Device Operating Voltage
3.0
3.6
4.0
V
At pin 3 with ICC=40mA
Operating Current
40
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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