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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching® Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
9
8
7
6
12 VCC2
11 VCC2
10 VCC
1
16
15
14
13
4
VPD2
3
VMODE
2
VPD1
5
RF2186
3V W-CDMA POWER 1900MHZ/
3V LINEAR POWER AMPLIFIER
• 3V 1850-1910MHz CDMA-2000 Handsets
• 3V 1920-1980MHz W-CDMA Handsets
• Spread-Spectrum Systems
• Commercial and Consumer Systems
• Portable Battery-Powered Equipment
The RF2186 is a high-power, high-efficiency linear ampli-
fier IC targeting 3V handheld systems. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in 3V
CDMA-2000 and W-CDMA handsets, spread-spectrum
systems, and other applications in the 1850 MHz to
2000 MHz band. The device is self-contained with 50
Ω
input and the output can be easily matched to obtain opti-
mum power, efficiency, and linearity characteristics over
all recommended supply voltages.
• Single 3V Supply
• 27dBm Linear Output Power
• 31dB Linear Gain
• 35% Linear Efficiency
• On-board Power Down Mode
RF2186
3V W-CDMA Power 1900MHZ/ 3V Linear Power
Amplifier
RF2186 PCBA
Fully Assembled Evaluation Board
2
Rev A2 010515
3.75
3.75
+
1.50 SQ
4.00
4.00
1
0.45
0.28
3.20
1.60
0.75
0.50
12°
INDEX AREA
3
1.00
0.90
0.75
0.65
0.05
0.00
NOTES:
5
Package Warpage: 0.05 max.
4
Pins 1 and9are fused.
Shaded Pin is Lead 1.
1
Dimension applies to plated terminal and is measured
0.10 mm and 0.25 mm from terminal tip.
2
The terminal #1 identifier and terminal numbering conv
shall conform to JESD 95-1 SPP-012. Details of termin
identifier are optional, but must be located within the zo
indicated. The identifier may be either a mold or marke
feature.
3
0.80
TYP
2
1
Dimensions in mm.
Package Style: LCC, 16-Pin
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