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4-184
RF2366
Rev A6 010816
4
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +8.0
VDC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
°C
Storage Temperature
-40 to +150
°C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
TAMB=25°C, VCC=3.0V
PCS Low Noise Amplifier
RF= 1930MHz to 1990MHz
Frequency Range
1930 to 1990
MHz
HIGH GAIN MODE
Gain Select< 0.8V, VPD/VREF=3V
Gain
10
12.5
dB
Noise Figure
1.4
1.8
dB
IIP3
9
14
dBm
Current Drain
6.5
mA
Input VSWR
1.8:1
Output VSWR
1.6:1
BYPASS MODE
Gain Select> 1.8V, VPD/VREF=0V
Gain
-4.0
-2.5
dB
IIP3
18.5
dBm
Input VSWR
1.8:1
3:1
Output VSWR
1.8:1
2.5:1
Current Drain
0.85
mA
PCS CDMA Driver
RF= 1850MHz to 1910MHz
Frequency
1850 to 1910
MHz
HIGH GAIN MODE
Gain Select< 0.8V, VPD/VREF=3V
Gain
12
dB
Noise Figure
1.6
dB
Output Power
4
dBm
ACPR1
-60
dBc/30kHz
POUT=+4dBm, +1.25MHz offset
Input VSWR
1.9:1
Output VSWR
1.6:1
Current Drain
6.5
mA
BYPASS MODE
Gain Select> 1.8V, VPD/VREF=0V
Gain
-3
dB
IIP3
17
dBm
Input VSWR
2:1
Output VSWR
1.5:1
Current Drain
0.85
mA
Power Supply
Voltage (VCC)3
V
VSELECT Low
0.8
V
High Gain mode.
Select< 0.8V, VPD/VREF=3V
VSELECT High
1.8
V
Low Gain mode.
Select> 1.8V, VPD/VREF=0V
Power Down
10
µA
Gain Select< 0.8V, VPD/VREF=0V, VCC=0V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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