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2SD1782K Datasheet(PDF) 2 Page - Rohm

Part # 2SD1782K
Description  Power Transistor (80V, 0.5A)
PDF  4 Pages
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Manufacturer  ROHM [Rohm]
Direct Link  http://www.rohm.com
Logo ROHM - Rohm

2SD1782K Datasheet(HTML) 2 Page - Rohm

  2SD1782K Datasheet HTML 1Page - Rohm 2SD1782K Datasheet HTML 2Page - Rohm 2SD1782K Datasheet HTML 3Page - Rohm 2SD1782K Datasheet HTML 4Page - Rohm  
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2SD1782K
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
°C)
Parameter
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE
VCE(sat)
fT
Cob
Min.
80
80
5
−
−
120
−
−
−
−
−
−
−
−
−
0.2
120
7.5
−
−
−
0.5
0.5
390
0.5
−
−
VIC
=50
µA
IC
=2mA
IE
=50
µA
VCB
=50V
VEB
=4V
VCE
=3V, IC=100mA
IC/IB
=500mA/50mA
VCE
=10V, IE= −50mA, f=100MHz
VCB
=10V, IE=0A, f=1MHz
V
V
µA
µA
−
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Packaging specifications and hFE
Package
Code
T146
3000
Taping
Basic ordering
unit (pieces)
QR
hFE
2SD1782K
Type
hFE values are classified as follows :
Item
Q
hFE
120 to 270
R
180 to 390
Electrical characteristic curves
BASE TO EMITTER VOLTAGE : VBE
(V)
Fig.1
Grounded emitter propagation
characteristics
0.2
500
200
100
20
50
10
2
1
5
0.4
0.6
0.8
1.0
1.2
1.4
0
VCE
=3V
25
°C
−25°C
Ta
=100°C
COLLECTOR TO EMITTER VOLTAGE : VCE
(V)
Fig.2
Grounded emitter output
characteristics
0
0.1
0.2
0.3
0.4
0.5
0
0.4
0.8
1.2
1.6
2.0
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
4.0mA
4.5mA
5.0mA
IB
=0mA
Ta
=25°C
COLLECTOR CURRENT : IC
(mA)
Fig.3
DC current gain vs. collector
current
1
10
20
50
100
200
500
1000
2
5
10
20
50 100 200
5001000
VCE
=3V
Ta
=100°C
25
°C
−25°C



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