EMB3 / UMB3N / IMB3A

Transistors

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Electrical characteristics (Ta = 25

°C)

Parameter

Symbol

Min.

−50

−50

−5

−

−

100

−

3.29

−

−

−

−

−

250

−

4.7

−

−

−

−0.5

−0.5

600

−0.3

6.11

−50µA

−1mA

−50µA

−50V

−4V

−

−5mA/−2.5mA

V

V

µA

µA

−

V

k

Ω

Typ.

Max.

Unit

Conditions

−

250

−

−5mA, f=100MHz

∗

MHz

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

DC current transfer ratio

Transition frequency

Collector-emitter saturation voltage

Input resistance

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Electrical characteristic curves

−5V

−100µ−1m

−10m

−200µ−2m

−20m

−500µ−5m

−50m −100m

1k

500

200

100

50

20

10

5

2

1

(A)

Fig.1 DC current gain vs. collector

current

−40°C

25

°C

Ta=100

°C

−500m

−200m

−100m

−50m

−20m

−10m

−5m

−2m

−1m

−1

−100µ−1m

−10m

−200µ−2m

−20m

−500µ−5m

−50m −100m

(A)

Fig.2 Collector-emitter saturation

voltage vs. collector current

Ta=100

°C

25

°C

−40°C