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KA8501 Datasheet(PDF) 3 Page - Samsung semiconductor

Part # KA8501
Description  SPEECH NETWORK WITH DIALER INTERFACE
PDF  4 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KA8501 Datasheet(HTML) 3 Page - Samsung semiconductor

  KA8501 Datasheet HTML 1Page - Samsung semiconductor KA8501 Datasheet HTML 2Page - Samsung semiconductor KA8501 Datasheet HTML 3Page - Samsung semiconductor KA8501 Datasheet HTML 4Page - Samsung semiconductor  
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KA8501A
SPEECH NETWORK WITH DIALER INTERFACE
ELECTRICAL CHARACTERISTICS (Continued)
Characteristic
Symbol
Test Conditions
Min
Typ
Max
Unit
RX Gain Flatness
∆ G
V (RX)
VRI = 0.3V,
fref = 1KHz
IL = 12 ~ 80mA
-
-
± 1
dB
IL =
VRO = 1.6V
-
-
2
f =
12mA
VRO = 1.9V
-
-
10
1KHz
IL =
VRO = 1.8V
-
-
2
50mA
VRO = 2.1V
-
-
10
RX Noise
VNO (RX)
VRI = 0V, IL = 12 ~ 80mA
-
-
100
µV
RX Output Impedance
RO (RX)
VRO = 50mV, IL = 40mA
-
-
100
Ω
MF Supply Voltage
VDD (MF)
IL = 12 ~ 80mA
2.4
2.5
-
V
Stand by
ISB (MF)
0.5
-
-
Operation
IDD (MF)
2
-
-
MF Amplifier Gain
GV (MF)
IL = 12 ~ 80mA
fMF = 1KHz
VMF = 80mV
15
-
17
dB
DC Input Voltage Level (pin 14)
VI (MF)
VMF = 80mV
-
0.3VDD
-
V
Input Impedance (pin 14)
ZI (MF)
VMF = 80mV
40
-
-
K
Ω
Distortion
THD MF
VMF = 110mV
IL = 12 ~ 80mA
-
-
2
%
Starting Delay Time
tD (ST)
IL = 12 ~ 80mA
-
-
5
mS
-
-
1
1.6
-
-
Stand by
ISB (MUTE)
IL = 12 ~ 80mA
-
-
-10
Operation
IDD (MUTE)
IL = 12 ~ 80mA
-
-
+10
RX Distortion
MF Supply Current
THDRX
Muting Current
IL = 12 ~ 80mA
%
mA
µA
V
Muting Threshold Voltage (pin 3)
VTH(MUTE)



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