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S1T2425A Datasheet(PDF) 3 Page - Samsung semiconductor

Part # S1T2425A
Description  SPEECH NETWORK WITH DIALER INTERFACE
PDF  7 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S1T2425A Datasheet(HTML) 3 Page - Samsung semiconductor

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SPEECH NETWORK WITH DIALER INTERFACE
S1T2425A
3
Tip-Ring Voltage
(including polarity guard bridge
drop of 1.4V)
(Speech Mode)
VTR
IL = 5.0mA
IL = 10mA
IL = 20mA
IL = 40mA
IL = 60mA
−
−
−
−
−
2.4
3.9
4.6
5.6
6.6
−
−
−
−
−
VDC
AC impedance
Speech mode (incl. C6,see fig.
4)
Zac = (600)V +/ (VS - V+)
Tone Mode (including C6)
Zac
IL = 20mA
IL = 60mA
20mA < IL , 60mA
−
−
−
750
300
1650
−
−
−
W
SYSTEM AMPLIFIERS
TX Gain
TXO Bias Voltage
TXO Bias Voltage
TXO Bias Voltage
TXO Bias Voltage
TXI input Resistance
GV (TX)
VBIAS (SPM)
VBIAS (TM)
VOL (SPM)
VOL (SPM)
RI (TXI)
TXI to TXO
Speech/Pulse Mode
Tone Mode
Speech/Pulse Mode
Speech/Pulse Mode
24
0.45
VR −25
VR −25
−
−
26
0.52
VR −5.0
VR −5.0
125
10
28
0.60
−
−
250
−
dB
xVR
mV
mV
mV
k
Ω
RX
RXO Bias voltage
RXO Source current
RXO Source current
RXO High Voltage
RXO Low Voltage
VBIAS (AM)
ISOURCE (SM)
ISOURCE (PTM)
VOH (AM)
VOL (AM)
All Mode
Speech Mode
Pulse/tone Mode
All Mode
All Mode
0.45
1.5
200
VR −100
−
0.52
2.0
400
VR −50
50
0.60
−
−
−
150
xVR
mA
µA
mV
mV
SIDETONE AMPLIFIER
Gain (TXO to STA)
Speech Mode
Speech Mode
Pulse Mode
Pulse Mode
Gv(STA)
@VLR = 0.5V
@VLR = 2.5V
@VLR = 0.2V
@VLR = 1.0V
−
−
−
−
−15
−21
−15
−21
−
−
−
−
dB
STA Bias Voltage
VBIAS (STA)
All Modes
0.65
0.8
0.9
xVR
MICROPHONE, RECEIVER CONTROLS
MIC Saturation Voltage
VSAT (MIC)
Speech Mode,1 = 500
µA
−
50
125
mV
MIC Leakage Current
ILKG (MIC)
Dialing Mode,Pin 1=3.0V
−
0
5.0
µA
MAT Resistance
RRMT (SM)
RRMT (DM)
Speech Mode
Dialing Mode
−
5.0
8.0
10
15
18
Ω
k
Ω
RMT Delay
tD (RMT)
Dialing to Speech
2.0
4.0
20
ms
EQUALIZATION AMPLIFIER
GAIN (V + to EQ)
Speech Mode
Speech Mode
Pulse Mode
Pulse Mode
GV (EQ)
@ VLR = 0.5V
@ VLR = 2.5V
@ VLR = 0.2V
@ VLR = 1.0V
−
−
−
−
−12
−2.5
−12
−2.5
−
−
−
−
dB
ELECTRICAL CHARACTERISTICS (Ta = 25°C) (Continued)
Characteristic
Symbol
Test Conditions
Min.
Typ.
Max.
Unit



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