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S3C821 Datasheet(PDF) 32 Page - Samsung semiconductor

Part # S3C821
Description  S3C8-SERIES MICROCONTROLLES
PDF  33 Pages
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S3C821 Datasheet(HTML) 32 Page - Samsung semiconductor

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S3P821A OTP
S3C821A/P821A
20-6
Table 20-4. D.C. Electrical Characteristics (Continued)
(T
A = – 40
°C to + 85 °C, V
DD = 2.0 V to 5.5 V)
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
VLC2 output
voltage
V
LC2
V
DD = 2.7 V to 5.5 V
LCD clock = 0 Hz
0.8 V
DD
– 0.15
0.8 V
DD
0.8 V
DD
+ 0.15
V
VLC3 output
voltage
V
LC3
V
LC1 = VDD
0.6 V
DD
– 0.15
0.6 V
DD
0.6 V
DD
+ 0.15
VLC4 output
voltage
V
LC4
0.4 V
DD
– 0.15
0.4 V
DD
0.4 V
DD
+ 0.15
VLC5 output
voltage
V
LC5
0.2 V
DD
– 0.15
0.2 V
DD
0.2 V
DD
+ 0.15
Pull-up resistors
R
L1
V
IN = 0 V; TA = 25°C
V
DD = 3.0 ± 10%; Ports 0–5
30
80
200
k
Ω
R
L2
V
IN = 0 V; TA = 25 °C
V
DD = 3.0 ± 10 %
RESET only
300
500
800
LCD voltage
dividing resistor
R
LCD
V
LCD = 2.7 V to 5.5 V
T
A = 25 °C
45
65
80
k
Ω
Supply current
I
DD1
Run mode; V
DD=5.0V±10%
6.0 MHz
–
6.0
12
mA
(note)
Crystal oscillator
C1 = C2 = 22 pF
4.19 MHz
4.5
9.0
V
DD = 3.0 V ± 10 %
6.0 MHz
2.9
5.8
4.19 MHz
2.0
4.0
I
DD2
Idle mode; V
DD=5.0 V± 0%
6.0 MHz
1.3
2.6
Crystal oscillator
C1 = C2 = 22 pF
4.19 MHz
1.2
2.4
V
DD = 3.0 V ± 10 %
6.0 MHz
0.6
1.2
4.19 MHz
0.4
0.8
I
DD3
Run mode; V
DD = 3.0 V ± 10 %
32 kHz crystal oscillator
20
40
µA
I
DD4
Idle mode; V
DD = 3.0 V ± 10 %
32 kHz crystal oscillator
7
14
I
DD5
Stop mode; V
DD = 5.0 V ± 10 %
0.5
3
Stop mode; V
DD = 3.0 V ± 10 %
0.3
2
NOTES:
1.
Supply current does not include current drawn through internal pull-up resistors, LCD voltage dividing resistors, and
ADC.
2.
IDD1 and IDD2 include power consumption for subsystem clock oscillation.
3.
IDD3 and IDD4 are current when main system clock oscillation stops and the subsystem clock is used.
4.
IDD5 is current when main system clock and subsystem clock oscillation stops.



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