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2SC5669 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SC5669 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 4 page ![]() 2SA2031 / 2SC5669 No.6586-1/4 Features • Large current capacitance. • Wide ASO and high durability against breakdown. • Adoption of MBIT process. Specifications Note*( ) : 2SA2031 Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO ( −)250 V Collector-to-Emitter Voltage VCEO ( −)230 V Emitter-to-Base Voltage VEBO ( −)6 V Collector Current IC ( −)15 A Collector Current (Pulse) ICP ( −)30 A Collector Dissipation PC 2.5 W Tc=25 °C 140 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(--)250V, IE=0 (--)0.1 mA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0 (--)0.1 mA DC Current Gain hFE(1) VCE=(--)5V, IC=(--)1A 60 160 hFE(2) VCE=(--)5V, IC=(--)7.5A 35 Continued on next page. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN Ordering number : ENN6586 2SA2031 / 2SC5669 230V / 15A, AF100W Output Applications Package Dimensions unit : mm 2022A [2SA2031 / 2SC5669] 61500 TS IM TA-2927 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PB 15.6 14.0 1.6 1.0 2.0 0.6 3.2 4.8 2.0 0.6 5.45 5.45 1 2 3 PNP Epitaxial Planar Silicon Transistor NPN Triple Diffused Planar Silicon Transistor |
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