Electronic Components Datasheet Search
  English  ▼

X  

Preview PDF HTML

2SC5706 Datasheet(PDF) 2 Page - Sanyo Semicon Device

Part # 2SC5706
Description  High Current Switching Applications
PDF  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SANYO [Sanyo Semicon Device]
Direct Link  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SC5706 Datasheet(HTML) 2 Page - Sanyo Semicon Device

  2SC5706 Datasheet HTML 1Page - Sanyo Semicon Device 2SC5706 Datasheet HTML 2Page - Sanyo Semicon Device 2SC5706 Datasheet HTML 3Page - Sanyo Semicon Device 2SC5706 Datasheet HTML 4Page - Sanyo Semicon Device 2SC5706 Datasheet HTML 5Page - Sanyo Semicon Device  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
2SA2039 / 2SC5706
No.6912-2/5
Specifications
Note*( ) : 2SA2039
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)80
V
Collector-to-Emitter Voltage
VCES
(--50)80
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)5
A
Collector Current (Pulse)
ICP
(--)7.5
A
Base Current
IB
(--)1.2
A
Collector Dissipation
PC
0.8
W
Tc=25
°C15
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)40V, IE=0
(--)1
µA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0
(--)1
µA
DC Current Gain
hFE
VCE=(--)2V, IC=(--)500mA
200
560
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)500mA
(360)400
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(24)15
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)1A, IB=(--)50mA
(--115)90
(--195)135
mV
IC=(--)2A, IB=(--)100mA
(--255)160
(--430)240
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=(--)2A, IB=(--)100mA
(--)0.89
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10µA, IE=0
(--50)80
V
Collector-to-Emitter Breakdown Voltage
V(BR)CES
IC=(--)100µA, RBE=0
(--50)80
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)50
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10µA, IC=0
(--)6
V
Turn-On Time
ton
See specified test circuit.
(30)35
ns
Storage Time
tstg
See specified test circuit.
(230)300
ns
Fall Time
tf
See specified test circuit.
(15)20
ns
Swicthing Time Test Circuit
VR10
25
Ω
VCC=25V
VBE= --5V
10IB1= --10IB2= IC=1A
+
+
50
Ω
INPUT
OUTPUT
RB
100
µF
470
µF
PW=20
µs
IB1
IB2
D.C.
≤1%
For PNP, the polarity is reversed.



Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com