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C5707 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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C5707 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 5 page ![]() 2SA2040/2SC5707 No.6913-2/5 + + 50 Ω INPUT OUTPUT VR RB RL VCC=25V 100 µF 470 µF VBE= --5V PW=20 µs IB1 IB2 D.C. ≤1% 20IB1= --20IB2= IC=2.5A For PNP, the polarity is reversed. Specifications Note*( ) : 2SA2040 Absolute Maximum Ratings at Ta=25 °C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)80 V Collector-to-Emitter Voltage VCES (--50)80 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V Collector Current IC (--)8 A Collector Current (Pulse) ICP (--)11 A Base Current IB (--)2 A Collector Dissipation PC 1.0 W Tc=25 °C15 W Junction Temperature Tj 150 °C Storage Temperature Tstg −55 to +150 °C Electrical Characteristics at Ta=25 °C Ratings Parameter Symbol Conditions min typ max Unit Collector Cutoff Current ICBO VCB=(--)40V, IE=0 (--)0.1 µA Emitter Cutoff Current IEBO VEB=(--)4V, IC=0 (--)0.1 µA DC Current Gain hFE VCE=(--)2V, IC=(--)500mA 200 560 Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)500mA (290)330 MHz Output Capacitance Cob VCB=(--)10V, f=1MHz (50)28 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)3.5A, IB=(--)175mA (--230)160 (--390)240 mV IC=(--)2A, IB=(--)40mA (--240)110 (--400)170 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)40mA (--)0.83 (--)1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0 (--50)80 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100µA, RBE=∞ 80 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0 (--)6 V Turn-On Time ton See specified test circuit. (40)30 ns Storage Time tstg See specified test circuit. (225)420 ns Fall Time tf See specified test circuit. 25 ns Swicthing Time Test Circuit |
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