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2SA608 Datasheet(PDF) 1 Page - Sanyo Semicon Device |
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2SA608 Datasheet(HTML) 1 Page - Sanyo Semicon Device |
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1 / 4 page ![]() Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. PNP/NPN Epitaxial Planar Silicon Transistors Low-Frequency General-Purpose Amplifier Applications Ordering number:ENN6324 2SA608N/2SC536N SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 10700TS (KOTO) TA-2543 No.6324–1/4 Package Dimensions unit:mm 2164 [2SA608N/2SC536N] ˚C ˚C Electrical Characteristics at Ta = 25˚C 1 : Emitter 2 : Collector 3 : Base SANYO : NPA-WA Applications · Capable of being used in the low frequency to high frequency range. Features · Large current capacity and wide ASO. ( ) : 2SA608N Specifications Absolute Maximum Ratings at Ta = 25˚C Continued on next page. * The 2SA608N/2SC536N are classified by 1mA hFE as follow 0.45 0.5 1.27 2.5 2.5 0.45 0.44 12 3 4.5 3.7 3.5 r e t e m a r a Pl o b m y Ss n o i t i d n o Cs g n i t a Rt i n U e g a t l o V e s a B - o t - r o t c e ll o CV O B C 0 6 ) 0 5 – (V e g a t l o V r e t t i m E - o t - r o t c e ll o CV O E C 0 5 ) – (V e g a t l o V e s a B - o t - r e t t i m EV O B E 6 ) – (V t n e r r u C r o t c e ll o CIC 0 5 1 ) – (A m ) e s l u P ( t n e r r u C r o t c e ll o CI P C 0 0 4 ) – (A m n o i t a p i s s i D r o t c e ll o CPC 0 0 5W m e r u t a r e p m e T n o i t c n u Jj T 0 5 1 e r u t a r e p m e T e g a r o t Sg t s T 0 5 1 + o t 5 5 – k n a RF G h E F 0 2 3 o t 0 6 10 6 5 o t 0 8 2 r e t e m a r a Pl o b m y Ss n o i t i d n o C s g n i t a R t i n U n i mp y tx a m t n e r r u C f f o t u C r o t c e ll o CI O B C V B C I , V 0 4 ) – ( = E 0 =1 . 0 ) – (A µ t n e r r u C f f o t u C r e t t i m EI O B E V B E I , V 5 ) – ( = C 0 =1 . 0 ) – (A µ n i a G t n e r r u C C D h E F 1V E C I , V 6 ) – ( = C A m 1 ) – ( =* 0 6 1* 0 6 5 h E F 2V E C I , V 6 ) – ( = C A m 1 . 0 ) – ( =0 7 |
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