RTM2301 datasheet(2/4 Pages) SIRECT

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Electrical Characteristics

Ta = 25

oC, unless otherwise noted

Parameter

Conditions

Symbol

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

VGS = 0V, ID = - 250uA

BVDSS

- 20

Drain-Source On-State Resistance

VGS = - 4.5V, ID = -2.8A

RDS(ON)

130

Drain-Source On-State Resistance

VGS = - 2.5V, ID = -2.0A

RDS(ON)

122

190

mΩ

Gate Threshold Voltage

VDS = VGS, ID = - 250uA

VGS(TH)

- 0.45

Zero Gate Voltage Drain Current

VDS = - 16V, VGS = 0V

IDSS

- 1.0

Gate Body Leakage

VGS = ± 8V, VDS = 0V

IGSS

± 100

On-State Drain Current

VDS ≧- 10V, VGS = -5V

ID(ON)

- 6

Forward Transconductance

VDS = - 5V, ID = - 2.8A

gfs

6.5

Dynamic

Total Gate Charge

5.4

Gate-Source Charge

Qgs

0.8

Gate-Drain Charge

VDS = - 6V, ID = - 2.8A,

VGS = - 4.5V

Qgd

1.1

Turn-On Delay Time

td(on)

Turn-On Rise Time

Turn-Off Delay Time

td(off)

110

Turn-Off Fall Time

VDD = - 6V, RL = 6Ω,

ID = - 1A, VGEN = - 4.5V,

RG = 6Ω

Input Capacitance

Ciss

447

Output Capacitance

Coss

127

Reverse Transfer Capacitance

VDS = - 6V, VGS = 0V,

f = 1.0MHz

Crss

Source-Drain Diode

Max. Diode Forward Current

- 1.6

Diode Forward Voltage

IS = - 1.6A, VGS = 0V

VSD

- 0.8

- 1.2

Note : pulse test: pulse width <=300uS, duty cycle <=2%

RTM2301

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