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RTM2302 Datasheet(PDF) 1 Page - Sirectifier Global Corp. |
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RTM2302 Datasheet(HTML) 1 Page - Sirectifier Global Corp. |
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1 / 4 page  http:// www.sirectsemi.com 20V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 20V RDS (on), Vgs @ 4.5V, Ids @ 3.6A = 65mΩ RDS (on), Vgs @ 2.5V, Ids @ 3.1A = 95mΩ Features Advanced trench process technology High density cell design for ultra low on-resistance Excellent thermal and electrical capabilities Compact and low profile SOT-23 package Block Diagram Ordering Information Part No. Packing Package RTM2302CX Tape & Reel SOT-23 Absolute Maximum Rating (Ta = 25℃ unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20V V Gate-Source Voltage VGS ± 8 V Continuous Drain Current ID 2.4 A Pulsed Drain Current IDM 10 A Ta = 25 oC 1.25 Maximum Power Dissipation Ta = 75 oC PD 0.8 W Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 oC Thermal Performance Parameter Symbol Limit Unit Lead Temperature (1/8” from case) TL 5 S Junction to Ambient Thermal Resistance (PCB mounted) Rθja 100 oC/W Note: Surface mounted on FR4 board t<=5sec. E L E C T R O N I C RTM2302 |
Similar Part No. - RTM2302 |
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Similar Description - RTM2302 |
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