2SC5417

Ordering number : EN5817

Inverter Lighting Applications

NPN Triple Diffused Planar Silicon Transistor

SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

51598TS (KOTO) TA-1043 No.5817-1/4

Package Dimensions

unit: mm

2079B-TO220FI (LS)

[2SC5417]

SANYO : TO220FI (LS)

1 : Base

2 : Collector

3 : Emitter

10.0

0.9

1.2

0.75

4.5

2.8

0.7

2.55

2.55

1

2

3

3.2

Specifications

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

1200

V

Collector-to-Emitter Voltage

VCEO

600

V

Emitter-to-Base Voltage

VEBO

9V

Collector Current

IC

3A

Collector Current (Pulse)

ICP

6A

Collector Dissipation

PC

2W

Tc=25°C

25

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Parameter

Symbol

Conditions

Ratings

min

typ

max

Unit

Collector Cutoff Current

ICBO

VCB=600V, IE=0

10

µA

Collector Cutoff Current

ICES

VCE=1200V, RBE=0

1.0

mA

Collector Sustain Voltage

VCEO(sus)

IC=100mA, IB=0

600

V

Emitter Cutoff Current

IEBO

VEB=9V, IC=0

1.0

mA

C-E Saturation Voltage

VCE(sat)

IC=1.5A, IB=0.3A

1.0

V

B-E Saturation Voltage

VBE(sat)

IC=1.5A, IB=0.3A

1.5

V

DC Current Gain

hFE(1)

VCE=5V, IC=0.1A

30

40

50

hFE(2)

VCE=5V, IC=1.0A

10

Storage Time

tstg

IC=1.5A, IB1=0.3A, IB2=–0.6A

2.5

µs

Fall Time

tf

IC=1.5A, IB1=0.3A, IB2=–0.6A

0.15

µs

Features

• High breakdown voltage.

• High reliability (Adoption of HVP process).

• Adoption of MBIT process.