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LM48820 Datasheet(PDF) 5 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor. Click here to check the latest version.
Part # LM48820
Description  Ground-Referenced, Ultra Low Noise, Fixed Gain, 95mW Stereo Headphone Amplifier
PDF  16 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM48820 Datasheet(HTML) 5 Page - National Semiconductor (TI)

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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage
4.75V
Storage Temperature
−65°C to +150°C
Input Voltage
-0.3V to V
DD + 0.3V
Power Dissipation (Note 3)
Internally Limited
ESD Susceptibility (Note 4)
2000V
ESD Susceptibility (Note 5)
200V
Junction Temperature
150°C
Thermal Resistance
 θ
JA (Note 9)
86°C/W (typ)
Operating Ratings
Temperature Range
T
MIN ≤ TA ≤ TMAX
−40°C
≤ T
A ≤ 85°C
Supply Voltage (V
DD)
1.6V
≤ V
DD ≤ 4.5V
Electrical Characteristics V
DD = 3V (Notes 1, 2)
The following specifications apply for V
DD = 3V, 16Ω load, and the conditions shown in “Typical Audio Amplifier Application Cir-
cuit” (see Figure 1) unless otherwise specified. Limits apply to T
A = 25°C.
Symbol
Parameter
Conditions
LM48820
Units
(Limits)
Typical
(Note 6)
Limit
(Notes 7, 8)
I
DD
Quiescent Power Supply Current
Full Power Mode
V
IN = 0V, inputs terminated
both channels enabled
4.7
5.5
mA (max)
V
IN = 0V, inputs terminated
one channel enabled
3
mA (max)
I
SD
Shutdown Current
SD_LC = SD_RC = GND
0.05
2
µA (max)
V
OS
Output Offset Voltage
R
L = 32Ω, VIN = 0V
1
5
mV (max)
A
V
Voltage Gain
–1.5
V/V
ΔA
V
Gain Match
1
%
R
IN
Input Resistance
20
15
25
k
Ω (min)
k
Ω (max)
P
O
Output Power
THD+N = 1% (max); f = 1kHz,
one channel
95
mW
THD+N = 1% (max); f = 1kHz,
R
L = 32Ω, one channel
80
mW
THD+N = 1% (max); f = 1kHz,
two channels in phase
50
40
mW (min)
THD+N = 1% (max); f = 1kHz,
R
L = 32Ω, two channels in phase
55
45
mW (min)
THD+N
Total Harmonic Distortion + Noise
P
O = 60mW, f = 1kHz,
single channel
0.01
%
P
O = 50mW, f = 1kHz, RL = 32Ω
single channel
0.007
%
PSRR
Power Supply Rejection Ratio
Full Power Mode
V
RIPPLE = 200mVP-P, Input Referred
f = 217Hz
f = 1kHz
f = 20kHz
80
75
58
dB
dB
dB
SNR
Signal-to-Noise Ratio
R
L = 32Ω, PO = 20mW,
(A-weighted)
f = 1kHz, BW = 20Hz to 22kHz
100
dB
V
IH
Shutdown Input Voltage High
V
DD = 1.8V to 4.2V
1.2
V (min)
V
IL
Shutdown Input Voltage Low
V
DD = 1.8V to 4.2V
0.45
V (max)
X
TALK
Crosstalk
P
O = 1.6mW, f = 1kHz
70
dB
Z
OUT
Output Impedance
SD_LC = SD_RC = GND
Input Terminated
Input not terminated
30
30
 
25
k
Ω (min)
5
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