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BUJ105AD Datasheet(PDF) 7 Page - NXP Semiconductors |
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BUJ105AD Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 12 page ![]() 9397 750 14196 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 — 14 December 2004 7 of 12 Philips Semiconductors BUJ105AD Silicon diffused power transistor 7. Package information Epoxy meets requirements of UL94 V-0 at 1 ⁄ 8 inch. IC/IB = 4. VCEclamp < 700 V; VCC = 150 V; VBB = −5V, −3 V and −1 V; L B = 1 µH; LC = 200 µH. Fig 13. Collector-emitter saturation voltage as a function of collector current; typical values Fig 14. Test circuit for reverse bias safe operating area Tj < Tj(max). Fig 15. Reverse bias safe operating area 001aac048 0.2 0.4 0.6 VCEsat (V) 0 IC (A) 10−1 10 1 Tj = 100 °C 25 °C −40 °C 001aab999 DUT LC LB IBon VBB VCC VCEclamp probe point VCEclamp (V) 0 800 600 200 400 001aac049 4 6 2 8 10 IC (A) 0 VBB = −5 V −3 V −1 V |
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