BUJ103AD datasheet(3/12 Pages) NXP

3 / 12 page

9397 750 14195

Product data sheet

Rev. 01 — 14 December 2004

3 of 12

Philips Semiconductors

BUJ103AD

Silicon diffused power transistor

Thermal characteristics

[1]

Device mounted on a printed-circuit board; minimum footprint.

Characteristics

Table 4:

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-mb)

thermal resistance from junction to mounting base

see Figure 2

1.56

K/W

Rth(j-a)

thermal resistance from junction to ambient

[1] -

K/W

Fig 2.

Transient thermal impedance from junction to mounting base as a function of pulse duration

001aab998

tp (s)

10−5

110

10−1

10−2

10−4

10−3

10−1

Zth(j-mb)

(K/W)

10−2

δ = 0.5

0.2

0.1

Ptot

δ =

0.01

0.05

0.02

Table 5:

Characteristics

Tmb = 25 °C; unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

ICES

collector-emitter cut-off

current

VBE = 0 V; VCE = VCESMmax

[1] -

1.0

VBE = 0 V; VCE = VCESMmax; Tj = 125 °C

[1] -

2.0

ICBO

collector-base cut-off current

VBE = 0 V; VCE = VCESMmax

[1] -

1.0

ICEO

collector-emitter cut-off

current

VCEO = VCEOMmax = 400 V

[1] -

0.1

IEBO

emitter-base cut-off current

VEB = 7 V; IC = 0 A

0.1

VCEOsus

collector-emitter sustaining

voltage

IB = 0 A; IC = 10 mA; L = 25 mH;

see Figure 3 and 4

400

VCEsat

collector-emitter saturation

voltage

IC = 3.0 A; IB = 0.6 A; see Figure 10

0.25

1.0

VBEsat

base-emitter saturation

voltage

IC = 3.0 A; IB = 0.6 A; see Figure 11

0.97

1.5

hFE

DC current gain

IC = 1 mA; VCE = 5 V; see Figure 9

IC = 500 mA; VCE = 5 V

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