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MAX691AC/D Datasheet(PDF) 13 Page - Maxim Integrated Products |
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MAX691AC/D Datasheet(HTML) 13 Page - Maxim Integrated Products |
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13 / 17 page ![]() Using Separate Power Supplies for VBATT and VCC If using separate power supplies for VCC and VBATT, VBATT must be less than 0.3V above VCC when VCC is above the reset threshold. As described in the previ- ous section, if VBATT exceeds this limit and power is lost at VCC, current flows continuously from VBATT to VCC via the VBATT-to-VOUT diode and the VOUT-to-VCC switch until the circuit is broken (Figure 8). Alternate Chip-Enable Gating Using memory devices with both CE and CE inputs allows the CE loop to be bypassed. To do this, con- nect CE IN to ground, pull up CE OUT to VOUT, and connect –CE OUT to the CE input of each memory device (Figure 10). The CE input of each part then connects directly to the chip-select logic, which does not have to be gated. Adding Hysteresis to the Power-Fail Comparator Hysteresis adds a noise margin to the power-fail com- parator and prevents repeated triggering of PFO when VIN is near the power-fail comparator trip point. Figure 11 shows how to add hysteresis to the power-fail com- Microprocessor Supervisory Circuits ______________________________________________________________________________________ 13 MAX691A MAX693A MAX800L MAX800M VOUT GND CE IN CE CE CE OUT CE CE CE CE CE CE *MAXIMUM Rp VALUE DEPENDS ON THE NUMBER OF RAMS. MINIMUM Rp VALUE IS 1k Ω. ACTIVE-HIGH CE LINES FROM LOGIC RAM 1 RAM 2 RAM 3 RAM 4 Rp* MAX691A MAX693A MAX800L MAX800M VCC GND PFI *OPTIONAL R2 R3 R1 VIN +5V C1* TO μP PFO VTRIP = 1.25 R1 + R2 R2 VH = 1.25/ R2 I I R3 VL - 1.25 + 5 - 1.25 = 1.25 R1 + R2 I I R3 R1 R3 R2 PFO 5V 0V 0V VH VTRIP VIN VL MAX691A MAX693A MAX800L MAX800M VCC GND PFI R2 R1 +5V PFO PFO 5V 0V NOTE: VTRIP IS NEGATIVE. 0V VTRIP V- 5 - 1.25 = 1.25 - VTRIP R1 R2 V- Figure 10. Alternate CE Gating Figure 12. Monitoring a Negative Voltage Figure 11. Adding Hysteresis to the Power-Fail Comparator |
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