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IXFR18N90P Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXFR18N90P
Description  Polar Power MOSFET HiPerFET
PDF  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFR18N90P Datasheet(HTML) 1 Page - IXYS Corporation

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© 2008 IXYS CORPORATION, All rights reserved
DS100058(10/08)
V
DSS
= 900V
I
D25
= 10.5A
R
DS(on)
≤≤≤≤≤ 660mΩ
Ω
Ω
Ω
Ω
t
rr
≤≤≤≤≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
900
V
V
DGR
T
J
= 25
°C to 150°C, R
GS = 1MΩ
900
V
V
GSS
Continuous
± 30
V
V
GSM
Transient
± 40
V
I
D25
T
C = 25°C
10.5
A
I
DM
T
C = 25°C, pulse width limited by TJM
36
A
I
A
T
C = 25°C9
A
E
AS
T
C = 25°C
800
mJ
dV/dt
I
S
≤ I
DM, VDD ≤ VDSS,TJ ≤ 150°C
15
V/ns
P
D
T
C = 25°C
200
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
Maximum lead temperature for soldering
300
°C
T
SOLD
Plastic body for 10s
260
°C
V
ISOL
50/60 Hz, RMS, 1 minute
2500
V~
F
C
Mounting force
20..120/4.5..27
N/lb.
Weight
5g
G = Gate
D
= Drain
S = Source
Preliminary Technical Information
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 1mA
900
V
V
GS(th)
V
DS = VGS, ID = 1mA
3.0
6.0
V
I
GSS
V
GS = ± 30V, VDS = 0V
± 100 nA
I
DSS
V
DS = VDSS
25
μA
V
GS = 0V
T
J = 125°C
1.5 mA
R
DS(on)
V
GS = 10V, ID = 9A, Note 1
660 m
Ω
Isolated Tab
ISOPLUS247
E153432
IXFR18N90P
PolarTM Power MOSFET
HiPerFETTM
Fearures
Silicon chip on Direct-Copper Bond
(DCB) substrate
Isolated mounting surface
2500V electrical isolation
Fast intrinsic diode
Avalanche rated
Low package inductance
Advantages
Low gate drive requirement
High power density
Applications:
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor drives
Robotics and servo controls


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