IXFX40N90P datasheet(1/4 Pages) IXYS

Part #	IXFX40N90P

Description	Polar Power MOSFET HiPerFET

PDF	4 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

900

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C40

A

I

DM

T

C = 25°C, pulse width limited by TJM

80

A

I

A

T

C = 25°C20

A

E

AS

T

C = 25°C

1.5

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS, TJ ≤ 150°C

15

V/ns

P

D

T

C = 25°C

960

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from case for 10s

300

°C

T

SOLD

Plastic body for 10s

260

°C

M

d

Mounting torque (IXFK)

1.13/10

Nm/lb.in.

F

C

Mounting force

(IXFX)

20..120 /4.5..27

N/lb.

Weight

TO-264

10

g

TO-247

6

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

900

V

GS(th)

V

DS = VGS, ID = 1mA

3.5

6.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

± 200 nA

I

DSS

V

DS = VDSS

50

μA

V

GS = 0V

T

J = 125°C

3.5 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

210 m

Ω

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

IXFK40N90P

IXFX40N90P

V

DSS

= 900V

I

D25

= 40A

R

DS(on) ≤

≤≤≤≤ 210m

Ω

t

rr

≤≤≤≤≤ 300ns

DS100061(10/08)

PolarTM Power MOSFET

HiPerFETTM

Features

International standard packages

Avalanche Rated

Low package inductance

Fast intrinsic diode

Advantages

Easy to mount

Space savings

High power density

Applications:

Switched-mode and resonant-mode

power supplies

DC-DC Converters

Laser Drivers

AC and DC motor drives

Robotics and servo controls

G = Gate

D

= Drain

S = Source

TAB = Drain

PLUS247 (IXFX)

TO-264 (IXFK)

S

G

D

(TAB)

Preliminary Technical Information

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