IXFB52N90P datasheet(1/4 Pages) IXYS

Part #	IXFB52N90P

Description	Polar Power MOSFET HiPerFET

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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DS100064A(02/09)

V

DSS

= 900V

I

D25

= 52A

R

DS(on)

≤≤≤≤≤ 160mΩ

Ω

t

rr

≤≤≤≤≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

900

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

900

V

GSS

Continuous

± 30

V

GSM

Transient

± 40

V

I

D25

T

C = 25°C52

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

104

A

I

A

T

C = 25°C26

A

E

AS

T

C = 25°C2

J

dV/dt

I

S

≤ I

DM, VDD ≤ VDSS,TJ ≤ 150°C

20

V/ns

P

D

T

C = 25°C

1250

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062 in.) from Case for 10s

300

°C

T

SOLD

Plastic Body for 10s

260

°C

F

C

Mounting Force

30..120/6.7..27

N/lb.

Weight

10

g

IXFB52N90P

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 3mA

900

V

GS(th)

V

DS = VGS, ID = 1mA

3.5

6.5

V

I

GSS

V

GS = ± 30V, VDS = 0V

± 200 nA

I

DSS

V

DS = VDSS, VGS= 0V

50

μA

T

J = 125°C

4 mA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

160 m

Ω

Features

Fast Intrinsic Diode

Avalanche Rated

Low Package Inductance

Advantages

Plus 264TM Package for Clip or Spring

Mounting

Space Savings

High Power Density

Applications

Switched-Mode and Resonant-Mode

Power Supplies

DC-DC Converters

Laser Drivers

AC and DC Motor drives

Robotics and Servo Controls

PolarTM Power MOSFET

HiPerFETTM

G = Gate

D

= Drain

S = Source

TAB = Drain

PLUS264TM

S

G

D

(TAB)

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