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BU941 Datasheet(PDF) 4 Page - STMicroelectronics |
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BU941 Datasheet(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() Electrical characteristics BU941, BU941P 4/12 2 Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Table 4. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICES Collector cut-off current (VBE = 0) VCE = 500 V VCE = 500 V TC = 125 °C 100 0.5 µA mA ICEO Collector cut-off current (IB = 0) VCE = 450 V VCE = 450 V TC = 125 °C 100 0.5 µA mA IEBO Emitter cut-off current (IC = 0) VEB = 5 V 20 mA VCEO(sus) (1) 1. Pulsed duration = 300 µs, duty cycle ≤1.5% Collector-emitter sustaining voltage (IB = 0) IC = 10 mA L = 10 mH Vclamp = 400 V see Figure 12 400 V VCE(sat) (1) Collector-emitter saturation voltage IC = 8 A IB = 100 mA IC = 10 A IB = 250 mA IC = 12 A IB = 300 mA 1.6 1.8 2 V V V VBE(sat) (1) Base-emitter saturation voltage IC = 8 A IB = 100 mA IC = 10 A IB = 250 mA IC = 12 A IB = 300 mA 2.2 2.5 2.7 V V V hFE (1) DC current gain IC = 5 A VCE = 10 V 300 VF Diode forward voltage IF = 10 A 2.5 V Functional test VCC = 24 V L = 7 mH Vclamp = 400 V see Figure 9 10 A ts tf Inductive Load Storage time Fall time IC = 7 A Vclamp = 300 V IB = 70 mA L = 7 mH VBE = 0 RBE = 47 Ω VCC = 12 V see Figure 11 15 0.5 µs µs |
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