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ABR5000 Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # ABR5000
Description  AVALANCHE BRIDGE RECTIFIERS
PDF  2 Pages
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

ABR5000 Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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ABR5000 - ABR5010
AVALANCHE BRIDGE
RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
* High case dielectric strength
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : plated .25" (6.35 mm). Faston
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge
and mounting surface for maximum heat
transfer efficiency.
* Weight : 17.1 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
ABR
5000
ABR
5001
ABR
5002
ABR
5004
ABR
5006
ABR
5008
ABR
5010
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
800
1000
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
560
700
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
800
1000
V
Minimum Avalanche Breakdown Voltage at 100
µA
VBO(min.)
100
150
250
450
700
900
1100
V
Maximum Avalanche Breakdown Voltage at 100
µA
VBO(max.)
550
600
700
900
1150
1350
1550
V
Maximum Average Forward Current Tc = 50
°C
IF(AV)
50
A
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Rating for fusing at ( t < 8.3 ms. )
I
2
t
660
A
2S
Maximum Forward Voltage per Diode at IF = 25 A
VF
1.1
V
Maximum DC Reverse Current
Ta = 25
°C
IR
10
µA
at Rated DC Blocking Voltage
Ta = 100
°C
IR(H)
200
µA
Typical Thermal Resistance (Note 1)
R
θJC
1
°C/W
Operating Junction Temperature Range
TJ
- 50 to + 150
°C
Storage Temperature Range
TSTG
- 50 to + 150
°C
Note :
1 ) Thermal resistance from junction to case with units mounted on heatsink.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING
IFSM
400
A
Dimensions in inches and ( millimeters )
BR50
φ
0.728(18.50)
0.688(17.40)
0.570(14.50)
0.530(13.40)
0.685(16.70)
0.618(15.70)
1.130(28.70)
1.120(28.40)
0.210(5.30)
0.200(5.10)
0.658(16.70)
0.618(15.70)
0.032(0.81)
0.028(0.71)
0.252(6.40)
0.248(6.30)
0.905(23.0)
0.826(21.0)
0.100(2.50)
0.090(2.30)
0.310(7.87)
0.280(7.11)


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