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US1M Datasheet(PDF) 1 Page - EIC discrete Semiconductors |
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US1M Datasheet(HTML) 1 Page - EIC discrete Semiconductors |
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1 / 2 page  US1A - US1M SURFACE MOUNT ULTRA FAST RECTIFIERS PRV : 50 ~ 1000 Volts Io : 1.0 Ampere FEATURES : * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free MECHANICAL DATA : * Case : SMA Molded plastic * Epoxy : UL94V-O rate flame retardant * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.060 gram (Approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL US1A US1B US1D US1G US1J US1K US1M UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum Continuous Reverse Voltage VR 50 100 200 400 600 800 1000 V Maximum Average Forward Current IF(AV) 1.0 A Maximum non-repetitive peak forward current 8.3ms Single half sine wave, Maximum Instantaneous Forward Voltage at IF = 1.0 A VF 1.1 1.7 V Maximum DC Reverse Current Ta = 25 °C IR 10 μA at Rated DC Blocking Voltage Ta = 100 °C IR(H) 50 μA Maximum Reverse Recovery Time (1) Trr 50 75 ns Typical Junction Capacitance (2) CJ 15 10 pF Junction Temperature Range TJ - 65 to + 175 °C Storage Temperature Range TSTG - 65 to + 175 °C Notes : (1) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC Page 1 of 2 Rev. 06 : September 23, 2008 RATING IFSM A 30 2.3 ± 0.2 SMA 1.6 ± 0.25 2.6 ± 0.15 Dimensions in millimeters 1.3 ± 0.2 1.6 ± 0.25 IATF 0060636 SGS TH07/1033 TW00/17276EM TH97/10561QM |
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