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STB35NF10T4 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STB35NF10T4
Description  N-channel 100V - 0.030廓 - 40A - D2PAK/TO-220 Low gate charge STripFET??II Power MOSFET
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STB35NF10T4 Datasheet(HTML) 3 Page - STMicroelectronics

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STB35NF10 - STP35NF10
Electrical ratings
3/14
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
100
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)100
V
VGS
Gate- source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
40
A
ID
Drain current (continuous) at TC = 100°C
28
A
IDM
(1)
1.
Pulse width limited by safe operating area.
Drain current (pulsed)
160
A
Ptot
Total dissipation at TC = 25°C
115
W
Derating Factor
0.77
W/°C
dv/dt (2)
2.
ISD ≤35A, di/dt ≤300A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
Peak diode recovery voltage slope
13
V/ns
EAS
(3)
3.
Starting Tj = 25 °C, ID = 20A, VDD = 80V
Single pulse avalanche energy
300
mJ
Tstg
Storage temperature
-55 to 175
°C
Tj
Max. operating junction temperature
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
1.30
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
TJ
Maximum lead temperature for soldering purpose
300
°C



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