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2N6036 Datasheet(PDF) 3 Page - STMicroelectronics |
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2N6036 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() 2N6036, 2N6039 Electrical characteristics Doc ID 5064 Rev 5 3/10 2 Electrical characteristics (Tcase = 25 °C; unless otherwise specified) Note: For PNP types voltage and current values are negative. Table 3. Electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit ICEV Collector cut-off current (VBE = -1.5 V) VCE = 80 V VCE = 80 V, Tc = 125 °C - 0.1 0.5 mA mA ICBO Collector cut-off current (IE = 0) VCB = 80 V - 0.1 mA ICEO Collector cut-off current (IB = 0) VCE = 80 V - 0.1 mA IEBO Emitter cut-off current (IC = 0) VEB = 5 V - 2 mA VCEO(sus) (1) 1. Pulsed duration = 300 µs, duty cycle 1.5%. Collector-emitter sustaining voltage IC = 100 mA 80 - V VCE(sat) (1) Collector-emitter saturation voltage IC = 2 A IB = 8 mA - 2 V IC = 4 A IB = 40 mA - 3 VBE(sat) (1) Base-emitter saturation voltage IC = 4 A IB = 40 mA - 4 V VBE(on) Base-emitter on voltage IC = 2 A VCE = 3 V - 2.8 V hFE (1) DC current gain IC = 0.5 A_ _ VCE = 3 V 500 - IC = 2 A_ VCE = 3 V 750 - 15000 IC = 4 A_ _ VCE = 3 V 100 - hfe Small signal current gain IC = 0.75 A_ VCE = 10 V f = 1 MHz 25 - CCBO Collector base capacitance (IE = 0) VCB = 10 V f = 0.1 MHz for 2N6036 for 2N6039 - 100 200 pF pF |
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