MJD112 datasheet(3/10 Pages) STMICROELECTRONICS

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MJD112, MJD117

Electrical characteristics

Doc ID 3540 Rev 3

3/10

Electrical characteristics

Tcase = 25 °C; unless otherwise specified.

Note:

For PNP types voltage and current values are negative.

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICEV

Collector cut-off current

(VBE = -1.5 V)

VCE = 80 V

VCE = 80 V, Tc = 125 °C

0.5

µA

ICBO

Collector cut-off current

(IE = 0)

VCB = 80 V

VCB = 100 V

µA

ICEO

Collector cut-off current

(IB = 0)

VCE = 50 V

µA

IEBO

Emitter cut-off current

(IC = 0)

VEB = 5 V

VCEO(sus)

(1)

Pulse test: pulse duration

≤ 300 µs, duty cycle ≤ 2 %

Collector-emitter

sustaining voltage (IB = 0)

IC = 30 mA

100

VCE(sat)

(1)

Collector-emitter saturation

voltage

IC = 2 A

IB = 8 mA

IC = 4 A

IB = 40 mA

VBE(sat)

(1)

Base-emitter saturation

voltage

IC = 4 A

IB = 40 mA

VBE(on)

Base-emitter on voltage

IC = 2 A

VCE = 3 V

2.8

hFE

(1)

DC current gain

IC = 0.5 A_ _ VCE = 3 V

500

IC = 2 A_

VCE = 3 V

1000

12000

IC = 4 A_ _

VCE = 3 V

200

Transition frequency

IC = 0.75 A_

VCE = 10 V

f = 1 MHz

MHz

CCBO

Collector base capacitance

(IE = 0)

VCB = 10 V

f = 0.1 MHz

for MJD112

for MJD117

100

200

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