STP4NM60_09 datasheet(1/17 Pages) STMICROELECTRONICS

Part #	STP4NM60

Description	N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IPAK Zener-protected MDmesh??Power MOSFET

PDF	17 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 17 page

September 2009

Doc ID 8370 Rev 4

1/17

17

STP4NM60

STD3NM60, STD3NM60-1

N-channel 600 V, 1.3

Ω, 3 A TO-220, DPAK, IPAK

Zener-protected MDmesh™ Power MOSFET

Features

■ High dv/dt and avalanche capabilities

■ Improved ESD capability

■ Low input capacitance and gate charge

■ Low gate input resistance

■ Tight process control and high manufacturing

yields

Applications

■ Switching

Description

Modems technology applies the benefits of the

multiple drain process to STMicroelectronics' well-

known PowerMESH™ horizontal layout structure.

The resulting product offers low on-resistance,

high dv/dt capability and excellent avalanche

characteristics.

Figure 1.

Internal schematic diagram

Type

VDSS

(@Tjmax)

RDS(on)

max

ID

PW

STD3NM60

650

< 1.5

Ω

3 A

42 W

STD3NM60-1

STP4NM60

4 A

69 W

1

2

3

1

3

2

1

TO-220

IPAK

DPAK

Table 1.

Device summary

Order code

Marking

Package

Packing

STD3NM60

D3NM60

DPAK

Tape and reel

STD3NM60-1

D3NM60

IPAK

Tube

STP4NM60

P4NM60

TO-220

Tube

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