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RM4 Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # RM4
Description  SILICON RECTIFIER DIODES
PDF  2 Pages
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

RM4 Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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RM4 - RM4Z
SILICON RECTIFIER DIODES
PRV : 100 - 400 Volts
Io : 1.7 Ampere
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-201AD Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight :
1.21 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specifie.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
RM4Y
RM4Z
RM4
UNIT
Maximum Reverse Voltage
VRM
100
200
400
V
Maximum Peak Reverse Surge Voltage
VRSM
150
250
450
V
Maximum Average Forward Current
IF(AV)
1.7 (3.0 A is with Heatsink)
A
Maximum Peak Forward Surge Current
Half-cycle Sine wave, 50 Hz, Single Shot
Maximum Forward Voltage at I F = 3.0 A
VF
0.95
V
Maximum Reverse Current
Ta = 25
°C
IR
10
μA
at VR = VRmax.
Ta = 150
°C
IR(H)
50
μA
Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Page 1 of 2
Rev. 02 : March 25, 2005
RATING
IFSM
200
A
0.21 (5.33)
0.19 (4.83)
DO - 201AD
0.375 (9.53)
0.285 (7.24)
0.052 (1.32)
0.048 (1.22)
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
1.00 (25.4)
MIN.


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