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STP11NK40Z Datasheet(PDF) 3 Page - STMicroelectronics |
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STP11NK40Z Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 17 page ![]() STB11NK40Z, STP11NK40ZFP, STP11NK40Z Electrical ratings Doc ID 8936 Rev 7 3/17 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220/D²PAK TO-220FP VDS Drain-source voltage (VGS = 0) 400 V VDGR Drain-gate voltage (RGS = 20KΩ) 400 V VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 9 9(1) 1. Limited only by maximum temperature allowed A ID Drain current (continuous) at TC=100°C 5.67 5.67(1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 36 36(1) A PTOT Total dissipation at TC = 25°C 110 30 W Derating factor 0.88 0.24 W/°C VESD(G-S) Gate source ESD (HBM-C= 100pF, R= 1.5k Ω) 3500 V dv/dt(3) 3. ISD ≤9A, di/dt ≤200 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. Peak diode recovery voltage slope 4.5 V/ns VISO Insulation withstand voltage (DC) -- 2500 V TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter Value Unit TO-220/D²PAK TO-220FP Rthj-case Thermal resistance junction-case max 1.14 4.2 °C/W Rthj-a Thermal resistance junction-ambient max 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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