STD2NK70Z datasheet(3/16 Pages) STMICROELECTRONICS

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STD2NK70Z - STD2NK70Z-1

Electrical ratings

3/16

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

700

VDGR

Drain-gate voltage (RGS = 20 kΩ)700

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25°C

1.6

Drain current (continuous) at TC = 100°C

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

6.4

Ptot

Total dissipation at TC = 25°C

Derating factor

0.36

W/°C

VESD(G-S)

Gate source ESD (HBM-C = 100pF, R = 1.5 K

Ω)

2000

dv/dt (2)

ISD ≤1.6A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

4.5

V/ns

Tstg

Storage temperature

55 to 150

°C

Max. operating junction temperature

Table 2.

Thermal data

Rthj-case

Thermal resistance junction-case max

2.78

°C/W

Rthj-amb

Thermal resistance junction-ambient max

100

°C/W

Maximum lead temperature for soldering purpose

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAS

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj Max)

1.6

EAS

Single pulse avalanche energy

(starting Tj=25°C, Id=Iar, Vdd=50V)

110

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