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STW75N20 Datasheet(PDF) 3 Page - STMicroelectronics

Part # STW75N20
Description  N-channel 200V - 0.028廓 - 75A - D2PAK - TO-220 - TO-247 Low gate charge STripFET??Power MOSFET
PDF  16 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW75N20 Datasheet(HTML) 3 Page - STMicroelectronics

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STB75N20 - STP75N20 - STW75N20
Electrical ratings
3/16
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
200
V
VDGR
Drain-gate voltage (RGS = 20 kΩ)
200
V
VGS
Gate-source voltage
± 20
V
ID
Drain current (continuous) at TC = 25°C
75
A
ID
Drain current (continuous) at TC = 100°C
47
A
IDM
(1)
1.
ISD < 20A, di/dt < 100A/µs, VDD = 80% V(BR)DSS
Drain current (pulsed)
300
A
Derating factor
1.52
PTOT
Total dissipation at TC = 25°C
190
W
TJ
Tstg
Operating junction temperature
Storage temperture
-50 to 150
°C
Table 2.
Thermal resistance
Symbol
Parameter
Value
Unit
TO-220/D²PAK
TO-247
RthJC
Thermal resistance junction-case Max
0.66
°C/W
RthJ-pcb
(1)
1.
When mounted on inch²FR-4 board (t < 10µs)
Thermal resistance junction-pcb Max
34
--
°C/W
RthJA
Thermal resistance junction-ambient Max
62.5
40
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 3.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAR
Avalanche current, repetitive or not-repetitive
(pulse width limited by TJ max)
37
A
EAS
Single pulse avalanche energy
(starting TJ= 25°C, Id= Iar, Vdd=50V)
205
mJ



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