Wuxi NCE Power Semiconductor Co., Ltd

Page

v1.0

2

NCE2301

Pb Free Product

http://www.ncepower.com

Gate-Body Leakage Current

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

-0.4

-1

V

55

110

mΩ

Drain-Source On-State Resistance

75

140

mΩ

Forward Transconductance

9.5

S

Dynamic Characteristics (Note4)

Input Capacitance

405

PF

Output Capacitance

75

PF

Reverse Transfer Capacitance

F=1.0MHz

55

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

11

nS

Turn-on Rise Time

35

nS

Turn-Off Delay Time

30

nS

Turn-Off Fall Time

10

nS

Total Gate Charge

3.3

12

nC

Gate-Source Charge

0.7

nC

Gate-Drain Charge

1.3

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

-1.2

V

Diode Forward Current (Note 2)

-1.3

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production