MMBF170LT3 datasheet(1/5 Pages) ONSEMI

Part #	MMBF170LT3

Description	Power MOSFET 500 mA, 60 V N-Channel SOT-23

PDF	5 Pages

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Manufacturer	ONSEMI [ON Semiconductor]

Direct Link	http://www.onsemi.com

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1 / 5 page

April, 2008 - Rev. 6

1

Publication Order Number:

MMBF170LT1/D

MMBF170LT1

Power MOSFET

500 mA, 60 V

N-Channel SOT-23

Features

• Pb-Free Packages are Available

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

Vdc

Drain-Gate Voltage

VDGS

60

Vdc

Gate-Source Voltage

- Continuous

- Non-repetitive (tp ≤ 50 ms)

VGS

VGSM

±20

±40

Vdc

Vpk

Drain Current - Continuous

- Pulsed

ID

IDM

0.5

0.8

Adc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board

(Note 1.) TA = 25°C

Derate above 25

°C

PD

225

1.8

mW

mW/

°C

Thermal Resistance, Junction-to-Ambient

RqJA

556

°C/W

Junction and Storage Temperature

TJ, Tstg

-55 to

+150

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR-5 = 1.0

0.75 0.062 in.

3

1

2

N-Channel

SOT-23

CASE 318

STYLE 21

MARKING DIAGRAM

& PIN ASSIGNMENT

500 mA, 60 V

RDS(on) = 5 W

3

Drain

2 Source

Gate 1

http://onsemi.com

ORDERING INFORMATION

See detailed ordering and shipping information in the

package dimensions section on page 2 of this data sheet.

6Z M

G

6Z

= Specific Device Code

M

= Date Code

G

= Pb-Free Package

(Note: Microdot may be in either location)

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