PD55008STR-E datasheet(1/25 Pages) STMICROELECTRONICS

Part #	PD55008STR-E

Description	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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May 2010

Doc ID 12259 Rev 2

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PD55008-E

PD55008S-E

RF POWER transistor, LdmoST plastic family

N-channel enhancement-mode, lateral MOSFETs

Features

■ Excellent thermal stability

■ Common source configuration

■ POUT = 8 W with 17dB gain @ 500 MHz/12.5 V

■ New RF plastic package

Description

The device is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It

operates at 12 V in common source mode at

frequencies up to 1 GHz.

The device boasts the excellent gain, linearity and

reliability of ST’s latest LDMOS technology

mounted in the first true SMD plastic RF power

package, PowerSO-10RF. The device’s superior

linearity performance makes it an ideal solution

for car mobile radio.

The PowerSO-10 plastic package, designed to

offer high reliability, is the first ST JEDEC

approved, high power SMD package. It has been

specially optimized for RF needs and offers

excellent RF performances and ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note

AN1294).

Figure 1.

Pin connection

PowerSO-10RF

(formed lead)

PowerSO-10RF

(straight lead)

Gate

Source

Drain

Table 1.

Device summary

Order code

Package

Packing

PD55008-E

PowerSO-10RF (formed lead)

Tube

PD55008S-E

PowerSO-10RF (straight lead)

Tube

PD55008TR-E

PowerSO-10RF (formed lead)

Tape and reel

PD55008STR-E

PowerSO-10RF (straight lead)

Tape and reel

www.st.com

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PD55008STR-E Datasheet(PDF) 1 Page - STMicroelectronics

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