PD57002-E datasheet(4/23 Pages) STMICROELECTRONICS

Part #	PD57002-E

Description	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PDF	23 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 23 page

Electrical characteristics

PD57002-E, PD57002S-E

4/23

Doc ID 12332 Rev 2

Electrical characteristics

TCASE = +25

2.1

Static

2.2

Dynamic

2.3

Moisture sensitivity level

Table 4.

Static

Symbol

Test conditions

Min

Typ

Max

Unit

IDSS

VGS = 0

VDS = 28 V

µA

IGSS

VGS = 20 V

VDS = 0

µA

VGS(Q)

VDS = 28 V

ID = 10 mA

2.0

5.0

VDS(ON)

VGS = 10 V

ID = 125 mA

0.7

0.9

GFS

VDS = 10 V

ID = 200 mA

mho

CISS

VGS = 0

VDS = 28 V

f = 1 MHz

7.1

COSS

VGS = 0

VDS = 28 V

f = 1 MHz

5.8

CRSS

VGS = 0

VDS = 28 V

f = 1 MHz

0.1

Table 5.

Dynamic

Symbol

Test conditions

Min

Typ

Max

Unit

P1dB

VDD = 28 V,

IDQ = 10 mA f = 960 MHz

VDD = 28 V, IDQ = 10 mA, POUT = 2 W, f = 960 MHz

Load

mismatch

VDD = 28 V,

IDQ = 10 mA, POUT = 2W, f = 960 MHz

All phase angles

10:1

VSWR

Table 6.

Moisture sensitivity level

Test methodology

Rating

J-STD-020B

MSL 3

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