STP9NM50N datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STD9NM50N - STD9NM50N-1 - STP9NM50N - STF9NM50N

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Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

500

dv/dt(1)

Characteristics value at turn off on inductive load

Drain-source voltage slope

Vdd= 400V, Id=7.5A,

Vgs=10V

V/ns

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc = 125°C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 3.7A

0.47

0.56

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

gfs

(1)

Pulsed: pulse duration = 300µs, duty cycle 1.5%

Forward transconductance

VDS =15V, ID= 3.7A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50V, f=1MHz, VGS=0

570

Coss eq.

(2)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDSS

Equivalent output

characteristics

VGS=0, VDS = 0V to 400V

Gate input resistance

f=1MHz Gate DC Bias=0

Test signal level=20mV

Open drain

Ω

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD= 400V, ID = 7.5A

VGS =10V

(see Figure 16)

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